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Product Detailed Parameters
- Description：MOSFET N-CH 60V 200A DDPAK
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.6mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：140 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：11430 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：375W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (DDPAK-3)
- Package / Case：TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
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Overview
The CSD18536KTT is a 60-V N-Channel NexFET Power MOSFET manufactured by Texas Instruments. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 279 A at 25°C. The device exhibits a typical on-resistance (Rds(on)) of 1.6 mΩ at Vgs = 10 V. Key electrical parameters include a gate charge (Qg) of 108 nC, a threshold voltage (Vgs(th)) of 1.4 V, and a power dissipation (Pd) of 375 W. The component operates within a temperature range of -55°C to +175°C junction temperature.
Feature Summary
- Utilizes NexFET technology for enhanced switching performance and low conduction losses.
- Designed with avalanche-rated capability for robust operation in inductive load scenarios.
- Features a single N-channel configuration with an integrated body diode.
Applications
- High-efficiency DC-DC converter designs
- Motor control applications requiring high current handling
- Power supply circuits utilizing through-hole mounting
Procurement Notes
Verify the specific suffix 'KTT' against official Texas Instruments documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with required thermal management solutions given the 375 W power dissipation rating. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.
Selection Notes
Select this component when a through-hole N-channel MOSFET with high current capacity (up to 279 A) and low on-resistance is required. Compare Rds(on) and gate charge values against alternative packages like TO-220 or D2PAK variants to optimize for board space and thermal constraints. Confirm that the 60 V breakdown voltage aligns with system operating conditions.
Part Context
This part belongs to the Texas Instruments NexFET family of silicon-based power MOSFETs. It is designed for high-power applications where efficiency and thermal performance are critical. The KTT suffix typically denotes a specific surface-mount or through-hole variant within the broader CSD18536 series, sharing core electrical characteristics with other members of the lineup.
Replacement Considerations
Consult official substitution guides for equivalent parts such as CSD18536KCS or CSD18536KTTT. Verify pinout compatibility and thermal resistance values before replacing. Ensure any substitute maintains the same 60 V rating and comparable Rds(on) to preserve circuit performance.
