SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The CSD18542KCS is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in a TO-220-3 through-hole package. The device features a drain-source breakdown voltage (Vds) of 60 V and a continuous drain current (Id) of 170 A. Its maximum on-resistance (Rds On) is 4 mOhms, with a gate charge (Qg) of 44 nC. The component operates within a temperature range of -55°C to +175°C and has a power dissipation rating of 200 W.
Verify the specific datasheet version and RoHS compliance status directly with Texas Instruments or authorized distributors before procurement. Ensure that the TO-220-3 through-hole mounting requirements align with your PCB design constraints. Confirm that the thermal management solution supports the specified 200 W power dissipation rating under your operating conditions.
Select this component when a 60 V N-channel MOSFET with low on-resistance and high current capability is required in a through-hole package. Consider the 4 mOhm Rds On and 170 A Id ratings against your circuit's load requirements. Evaluate the thermal performance within the -55°C to +175°C operating range to ensure reliability in your specific application environment.
The CSD18542KCS belongs to the CSD185xxKCS series of NexFET Power MOSFETs from Texas Instruments. This series is designed for high-efficiency power conversion applications. The KCS suffix indicates the specific TO-220-3 through-hole packaging format, distinguishing it from surface-mount variants within the broader product family.
Public confirmed substitute part numbers are not available in the provided documentation.