CSD18542KCS

CSD18542KCS

$2.47
  • Description:MOSFET N-CH 60V 200A TO220-3
  • Series:NexFET™
  • Mfr:Texas Instruments
  • Package:Tube

SKU:b60d3a179115 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 60V 200A TO220-3
  • Series:NexFET™
  • Mfr:Texas Instruments
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:44mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5070 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):200W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3
  • Package / Case:TO-220-3

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CSD18542KCS

Overview

The CSD18542KCS is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in a TO-220-3 through-hole package. The device features a drain-source breakdown voltage (Vds) of 60 V and a continuous drain current (Id) of 170 A. Its maximum on-resistance (Rds On) is 4 mOhms, with a gate charge (Qg) of 44 nC. The component operates within a temperature range of -55°C to +175°C and has a power dissipation rating of 200 W.

Feature Summary

  • NexFET technology for enhanced power efficiency
  • Low on-resistance for reduced conduction losses
  • High thermal stability suitable for demanding environments

Applications

  • Synchronous rectification in power supplies
  • DC-DC converter circuits
  • Motor control applications

Procurement Notes

Verify the specific datasheet version and RoHS compliance status directly with Texas Instruments or authorized distributors before procurement. Ensure that the TO-220-3 through-hole mounting requirements align with your PCB design constraints. Confirm that the thermal management solution supports the specified 200 W power dissipation rating under your operating conditions.

Selection Notes

Select this component when a 60 V N-channel MOSFET with low on-resistance and high current capability is required in a through-hole package. Consider the 4 mOhm Rds On and 170 A Id ratings against your circuit's load requirements. Evaluate the thermal performance within the -55°C to +175°C operating range to ensure reliability in your specific application environment.

Part Context

The CSD18542KCS belongs to the CSD185xxKCS series of NexFET Power MOSFETs from Texas Instruments. This series is designed for high-efficiency power conversion applications. The KCS suffix indicates the specific TO-220-3 through-hole packaging format, distinguishing it from surface-mount variants within the broader product family.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

CSD18542KCSCSD18542KCS
$2.47
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