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Product Detailed Parameters
- Description：MOSFET N-CH 60V 200A/170A DDPAK
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：57 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5070 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：250W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (DDPAK-3)
- Package / Case：TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
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Overview
The CSD18542KTTT is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in a D2PAK-3 (TO-263-3) surface-mount package. The device features a drain-source breakdown voltage of 60 V and supports a continuous drain current of 200 A. Its on-resistance is specified at 4 mOhms, with a gate-source voltage range of -20 V to 20 V. The threshold voltage is 1.8 V, and the total gate charge is 44 nC. It operates within a temperature range of -55°C to +175°C, with a power dissipation rating of 250 W.
Feature Summary
- NexFET technology for enhanced power efficiency
- Low on-resistance for reduced conduction losses
- High thermal stability up to 175°C junction temperature
Applications
- DC-DC converter modules
- Power distribution networks
- Load switching applications
Procurement Notes
Verify the specific suffix KTTT to confirm the D2PAK-3 tape-and-reel packaging configuration. Ensure the order matches the exact part number to avoid discrepancies in lead frame material or reel specifications. Cross-reference the manufacturer datasheet for moisture sensitivity levels and recommended soldering profiles prior to assembly.
Selection Notes
Select this component when a low Rds(on) value is required for high-current applications operating at 60V. The D2PAK-3 package provides a balance between thermal performance and board space constraints compared to through-hole alternatives. Consider the 44 nC gate charge for driver capability requirements in high-frequency switching environments.
Part Context
This part belongs to the CSD18 series of NexFET transistors from Texas Instruments. The series focuses on optimizing the figure of merit for power loss reduction. The CSD18542KTTT specifically targets applications needing robust current handling in a compact surface-mount footprint.
Replacement Considerations
Consult official substitution guides for equivalent parts with matching voltage, current, and package dimensions. Verify that any alternative maintains compatible gate charge and thermal resistance characteristics.
