CSD18543Q3A

$0.94

Description：MOSFET N-CH 60V 60A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:49824495fa28 Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 60A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1150 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：66W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-VSONP (3x3.3)
Package / Case：8-PowerVDFN

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CSD18543Q3A

Overview

The CSD18543Q3A is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in an 8-VSONP (3x3.3) surface-mount package. The device features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 12 A at ambient temperature, extending to 60 A at case temperature. Key electrical parameters include a maximum on-resistance of 12 mΩ at 10 V gate drive, a gate charge of 11.1 nC, and a threshold voltage of 1.5 V. It supports a gate-source voltage range of ±20 V, operates within a junction temperature range of -55°C to +150°C, and dissipates up to 66 W.

Feature Summary

NexFET technology designed for high efficiency and low switching losses
Enhancement-mode N-channel configuration for standard logic control
Robust thermal performance with high power dissipation capability

Applications

DC-DC converter circuits
Power management modules
Synchronous rectification applications

Procurement Notes

Verify the specific suffix 'A' against the manufacturer's datasheet to confirm pinout and electrical tolerances. Ensure the ordering part number matches the required tape-and-reel or cut-tape packaging format. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement to align with assembly processes.

Selection Notes

Select this component when a 60 V N-channel MOSFET with low on-resistance is required for compact designs. The 8-VSONP package suits space-constrained PCB layouts. Evaluate thermal management needs based on the 66 W power dissipation rating and ensure gate drive voltages remain within the specified ±20 V limits for reliable operation.

Part Context

This component belongs to the CSD18543 series from Texas Instruments, utilizing the NexFET brand. It is a single-channel enhancement-mode MOSFET intended for general-purpose power switching. The device is distinct from serial communication controllers or other unrelated semiconductor families sharing similar alphanumeric sequences.