CSD18563Q5A

Overview

The CSD18563Q5A is a NexFET Power MOSFET manufactured by Texas Instruments. It features an N-channel configuration with a 60V drain-source voltage rating and a continuous drain current of 100A at 25°C. The device offers a maximum on-resistance of 6.8mΩ at 10V gate drive. Key electrical parameters include a gate charge of 20nC, input capacitance of 1500pF, and a threshold voltage of 2.4V. It operates within a temperature range of -55°C to 150°C junction temperature.

Feature Summary

• NexFET technology for optimized power performance
• Low on-resistance for efficient conduction
• Enhanced thermal management capabilities

Applications

• DC-DC converter designs
• Power supply output stages
• Motor control applications

Procurement Notes

Verify the specific suffix 'Q5A' against official datasheets to confirm package type and tape/reel specifications. Ensure compatibility with existing PCB footprints for the 8-VSONP package. Confirm RoHS compliance status if required by project standards. Cross-reference ordering part numbers with manufacturer catalogs to avoid substitution errors.

Selection Notes

Select this component for high-current applications requiring low conduction losses. Evaluate thermal resistance values for heat dissipation requirements in the target enclosure. Compare gate charge characteristics against driver capabilities to ensure adequate switching speed. Verify voltage ratings exceed peak circuit voltages with appropriate safety margins.

Part Context

This part belongs to the CSD18563 series of single N-channel MOSFETs. It utilizes Texas Instruments' NexFET technology to achieve high efficiency. The device is designed for surface-mount assembly, offering a compact solution for power management systems where space and thermal performance are critical constraints.

Replacement Considerations

CSD18563Q5AT is listed as a parameter-equivalent alternative.