ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 80V 100A TO220-3
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Bulk,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：6.6mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id：3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3980 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：217W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
Download product information
Replacement Considerations
The CSD19505KCS is a verified substitute within the same NexFET family, sharing the TO-220-3 package and 80V rating. Verify that the Rds(on) of 3.1 mOhms meets the thermal requirements for the original design.
