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Product Detailed Parameters
- Description：MOSFET N-CH 80V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：4.1mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id：3.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：62 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4870 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 195W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD19502Q5B is an N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a maximum drain-source voltage (Vds) of 80 V and a continuous drain current (Id) of 100 A at 25°C. The device exhibits a typical on-resistance (Rds(on)) of 4.1 mΩ at Vgs = 10 V. Key electrical parameters include a gate charge (Qg) of 62 nC, a threshold voltage (Vgs(th)) of 3.3 V, and a power dissipation rating of 195 W at the case temperature. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- NexFET technology designed for low conduction losses
- Enhanced switching performance with low gate charge
- Robust thermal management via PowerTDFN package
Applications
- DC-DC converter modules
- Power distribution networks
- Load switch applications
Procurement Notes
Verify the specific suffix Q5B to confirm the 8-VSON-CLIP package configuration. Ensure compatibility with RoHS3 standards and check moisture sensitivity levels before assembly. Confirm that the ordering part number matches the required tape and reel specifications for automated placement processes.
Selection Notes
Select this component when an 80 V rating and high current capacity are required in a compact surface-mount footprint. The low Rds(on) makes it suitable for efficiency-critical designs. Compare against similar NexFET devices if different voltage ratings or package types are needed for the specific application constraints.
Part Context
This device belongs to the CSD19502 series from Texas Instruments, utilizing NexFET technology. It is part of a family of N-channel enhancement mode MOSFETs optimized for power management applications. The Q5B suffix denotes the specific 8-pin VSON-CLIP packaging variant.
