CSD19502Q5BT

$2.90

Description：MOSFET N-CH 80V 100A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:13f76f6b7720 Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 100A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：4.1mOhm @ 19A, 10V
Vgs(th) (Max) @ Id：3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：62 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4870 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 195W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-VSON-CLIP (5x6)
Package / Case：8-PowerTDFN

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CSD19502Q5BT

Overview

The CSD19502Q5BT is an N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a Vds of 80 V and supports a continuous drain current (Id) of 100 A at 25°C. The device offers a maximum Rds(on) of 4.1 mΩ at Vgs = 10 V, with a gate charge (Qg) of 62 nC. It operates within a junction temperature range of -55°C to +150°C and utilizes an 8-VSON-CLIP package.

Feature Summary

NexFET technology for optimized switching performance
Low on-resistance for high efficiency
Enhanced thermal management via clip lead frame

Applications

DC-DC converters
Power distribution networks
Motor control systems

Procurement Notes

Verify the specific suffix 'BT' against the official datasheet to confirm tape-and-reel packaging specifications. Ensure compatibility with RoHS3 standards and check for any recent PCN updates regarding wire bond or material changes before finalizing procurement plans.

Selection Notes

Select this component for applications requiring low conduction losses in compact designs. The 8-VSON-CLIP package provides superior thermal dissipation compared to standard VSON options. Evaluate gate drive requirements against the 62 nC charge specification to ensure adequate switching speed.

Part Context

This part belongs to the CSD19502 series of NexFET power MOSFETs from Texas Instruments. It is designed for high-current, low-voltage applications where space and thermal constraints are critical. The Q5B suffix indicates the specific package and reel configuration.