CSD19506KCS

$3.83

Description：MOSFET N-CH 80V 100A TO220-3
Series：NexFET™
Mfr：Texas Instruments
Package：Tube

SKU:353a7be0deca Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 100A TO220-3
Series：NexFET™
Mfr：Texas Instruments
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：156 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：12200 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：375W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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CSD19506KCS

Overview

The CSD19506KCS is an N-channel enhancement mode power MOSFET from the NexFET series by Texas Instruments. It features a maximum drain-source voltage (Vds) of 80 V and a continuous drain current (Id) of 273 A. The device has a maximum on-resistance (Rds(on)) of 2.8 mΩ. It is housed in a TO-220 package with three pins for through-hole mounting. The component operates within a temperature range of -55°C to 175°C and includes avalanche rating capabilities.

Feature Summary

NexFET technology designed to minimize conduction losses while maintaining fast switching performance.
Avalanche rated capability for robustness against transient energy events.
Drain-connected case configuration simplifies thermal management and circuit layout.

Applications

High-current DC-DC converter modules
Motor control systems requiring low on-resistance
Power supply output stages

Procurement Notes

Verify the specific suffix KCS confirms the TO-220 through-hole package variant. Confirm RoHS compliance status as some sources indicate non-compliance, which may affect regulatory usage. Ensure the ordering part number matches the required lead time and manufacturing batch specifications provided by the distributor or manufacturer.

Selection Notes

Select this component when high current handling up to 273 A is required at 80 V. The low Rds(on) of 2.8 mΩ makes it suitable for efficiency-critical applications. Consider the TO-220 package constraints for thermal dissipation compared to surface-mount alternatives like the KTTT variant if board space is limited.

Part Context

This device belongs to the CSD19506 family of NexFET power MOSFETs. It shares electrical characteristics with other variants in the series but differs in packaging. The KCS suffix specifically denotes the TO-220 through-hole form factor, distinguishing it from surface-mount options within the same electrical specification group.