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Product Detailed Parameters
- Description：MOSFET N-CH 100V 100A TO220-3
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：7.7mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id：3.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：38 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3870 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：214W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The CSD19531KCS is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a TO-220-3 through-hole package and operates with a drain-source voltage of 100 V. The device supports a continuous drain current of 200 A at 25°C and maintains a maximum on-resistance of 7.7 mOhms. Gate-source voltage limits are ±20 V, with a threshold voltage of 2.7 V and gate charge of 38 nC. Power dissipation reaches 179 W, while operating temperatures span from -55°C to +175°C.
Feature Summary
- NexFET technology enables low conduction losses and high efficiency in power switching applications.
- Enhancement mode N-channel configuration provides robust performance for high-current loads.
- TO-220-3 through-hole packaging facilitates mechanical mounting and thermal management.
Applications
- High-efficiency DC-DC converters
- Motor control circuits
- Power supply output stages
Procurement Notes
Verify the specific manufacturer part number against official Texas Instruments documentation to ensure authenticity. Confirm that the component matches the required electrical specifications and package type for your design. Check for RoHS compliance status as indicated in the official datasheet. Ensure storage conditions meet moisture sensitivity level requirements before assembly.
Selection Notes
Select this component when a through-hole N-channel MOSFET with 100 V rating and high current capability is required. Compare the 7.7 mOhm on-resistance against system loss requirements. Consider the TO-220-3 package constraints regarding board space and thermal dissipation needs relative to other available packages.
Part Context
This device belongs to the CSD19531 series of NexFET power MOSFETs from Texas Instruments. The series offers various package options including surface mount and through-hole configurations. The KCS suffix specifically denotes the TO-220-3 through-hole variant designed for higher power handling capabilities.
Replacement Considerations
Consult official Texas Instruments substitution guides for verified alternatives. Cross-reference parameters such as Rds(on), Vds, and package dimensions when evaluating potential replacements.
