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Product Detailed Parameters
- Description：MOSFET N-CH 100V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：6.4mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id：3.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3870 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：3.3W (Ta), 125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD19531Q5AT is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It features a VDS rating of 100V and a continuous drain current (Id) of 100A at case temperature. The device offers a maximum RDS(on) of 6.4 mΩ at VGS = 10V. Key electrical parameters include a gate charge (Qg) of 37 nC, a threshold voltage (VGS(th)) of 2.7V, and power dissipation capabilities of 3.3W at ambient temperature or 125W at case temperature. It operates within a junction temperature range of -55°C to +150°C and utilizes an 8-VSONP package.
Feature Summary
- NexFET technology provides low on-resistance for high efficiency in power switching applications.
- Enhancement mode N-channel configuration ensures reliable turn-on characteristics.
- Optimized thermal performance supports high current handling in compact surface-mount packages.
Applications
- DC-DC converter output stages
- Synchronous rectification circuits
- Power management modules
Procurement Notes
Verify the specific suffix 'AT' against the official Texas Instruments datasheet to confirm tape-and-reel packaging and moisture sensitivity level. Ensure the ordering part number matches the exact electrical specifications required for your design, as variations may exist within the CSD19531 family. Cross-reference with authorized distributors to confirm component authenticity and compliance status.
Selection Notes
Select this component when a 100V N-channel MOSFET with low gate charge and moderate on-resistance is required for space-constrained designs. The 8-VSONP package suits applications needing efficient thermal transfer without through-hole mounting. Compare Qg and RDS(on) trade-offs against other NexFET devices if higher switching speeds or lower conduction losses are critical.
Part Context
This device belongs to the Texas Instruments NexFET A series, designed for high-efficiency power conversion. The CSD19531Q5AT integrates advanced silicon technology to minimize switching losses. It is part of a broader portfolio of single N-channel MOSFETs optimized for various voltage and current ratings in modern electronic systems.
Replacement Considerations
Check for direct pin-compatible substitutes within the CSD19531 family, such as CSD19531Q5A, ensuring identical electrical parameters. Verify that any alternative maintains the same VSONP-8 footprint and thermal characteristics to avoid PCB redesign.
