CSD19532Q5BT

$2.70

Description：MOSFET N-CH 100V 100A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cb6041c2a713 Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 100A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：4.9mOhm @ 17A, 10V
Vgs(th) (Max) @ Id：3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：62 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4810 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 195W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-VSON-CLIP (5x6)
Package / Case：8-PowerTDFN

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CSD19532Q5BT

Overview

The CSD19532Q5BT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features a VSON-CLIP-8 surface-mount package. The device supports a drain-source voltage of 100 V and delivers a continuous drain current of 100 A. Its maximum on-resistance is specified at 4.9 mOhms, with a gate charge of 48 nC. The component operates within a temperature range of -55 °C to +150 °C and exhibits rise and fall times of 6 ns.

Feature Summary

Single-channel enhancement mode N-Channel configuration
NexFET silicon technology for optimized performance
VSON-CLIP-8 surface-mount packaging

Applications

Power management systems
DC-DC converter circuits
Motor control applications

Procurement Notes

Verify the specific suffix 'BT' against official Texas Instruments documentation to confirm tape-and-reel packaging specifications. Ensure the part number matches the exact electrical parameters required for the target design. Cross-reference the manufacturer's datasheet for updated RoHS and REACH compliance status prior to final procurement decisions.

Selection Notes

Select this component when a 100 V rating and high current capacity are required in a compact form factor. The low on-resistance minimizes conduction losses, while the fast switching speeds support efficient operation in high-frequency environments. Evaluate thermal dissipation requirements relative to the package's power handling capabilities.

Part Context

This device belongs to the CSD19532Q5B series from Texas Instruments. It is part of the broader NexFET portfolio designed for high-efficiency power switching. The Q5B designation indicates specific electrical characteristics and packaging options within this product line.