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Product Detailed Parameters
- Description：MOSFET N-CH 100V 100A TO220-3
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：10.5mOhm @ 55A, 10V
- Vgs(th) (Max) @ Id：3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2670 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：188W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The CSD19533KCS is a single N-Channel NexFET Power MOSFET manufactured by Texas Instruments. It features a 100V drain-source voltage rating and an 8.7mΩ maximum on-resistance at room temperature. The device supports a continuous drain current of 100A at case temperature, with a power dissipation capacity of 188W in the TO-220-3 package. It operates within a junction temperature range of -55°C to +175°C and utilizes silicon technology for enhancement mode operation.
Feature Summary
- NexFET technology designed for high-efficiency power switching applications
- Low on-resistance optimized for reduced conduction losses
- Robust thermal performance suitable for through-hole mounting
Applications
- DC-DC converter circuits
- Power management systems
- Motor control drives
Procurement Notes
Verify the specific datasheet revision and ordering information directly from Texas Instruments or authorized distributors. Confirm that the TO-220-3 package dimensions and pinout match your PCB footprint requirements. Ensure compliance with RoHS and REACH regulations as specified in the official product documentation before finalizing procurement.
Selection Notes
Select this component when a 100V N-Channel MOSFET with low Rds(on) is required for through-hole assembly. Consider the 100A current rating and 188W power dissipation limits relative to your thermal management strategy. Compare against other NexFET variants if different voltage or resistance specifications are needed for the target application.
Part Context
This part belongs to the CSD195xx series of NexFET Power MOSFETs from Texas Instruments. These devices are engineered for high-performance power conversion, offering improved efficiency compared to standard MOSFETs. The series includes various voltage and resistance ratings to suit diverse industrial and consumer electronics needs.
Replacement Considerations
Check for direct substitutes such as CSD19536KCS or CSD19506KCS if voltage or current requirements differ. Verify pin compatibility and thermal characteristics before replacing any existing component in a design.
