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Product Detailed Parameters
- Description：MOSFET N-CH 100V 50A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：15.1mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1680 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 63W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD19534Q5A is a single N-channel NexFET™ power MOSFET manufactured by Texas Instruments. It features a 100 V drain-source voltage rating and a continuous drain current of 50 A. The device exhibits a maximum on-resistance of 15.1 mΩ at 10 V gate drive. Key switching parameters include a gate charge of 17 nC, a fall time of 6 ns, and a rise time of 14 ns. It operates within a temperature range of -55°C to +150°C junction temperature with a power dissipation capacity of 63 W in an 8-VSONP package.
Feature Summary
- NexFET technology enables low gate charge for reduced switching losses
- Low on-resistance minimizes conduction losses and heat generation
- Avalanche-rated capability ensures reliability under voltage spike conditions
- Compact VSONP-8 package facilitates efficient thermal management
Applications
- Telecommunications primary side power conversion
- Motor control driver circuits
- General-purpose DC-DC converter stages
Procurement Notes
Verify the specific suffix 'AT' or 'A' against the manufacturer's official datasheet to confirm exact packaging and tape-and-reel specifications. Ensure compliance with RoHS and REACH requirements as defined in the latest component documentation before finalizing procurement orders.
Selection Notes
Select this component when a 100 V rating and high current handling are required in a compact surface-mount form factor. The low gate charge makes it suitable for high-frequency switching applications where drive efficiency is critical. Verify that the thermal design supports the specified power dissipation limits.
Part Context
This part belongs to the CSD19534Q5A series of NexFET™ power MOSFETs from Texas Instruments. It is designed for high-efficiency power management applications requiring robust performance in small footprints. The series utilizes silicon technology optimized for low on-resistance and fast switching speeds.
Replacement Considerations
Consult official substitution guides for equivalent parts within the same voltage and current class. Verify pinout compatibility and thermal characteristics before replacing.
