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Product Detailed Parameters
- Description：MOSFET N-CH 100V 200A DDPAK
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：2.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：153 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：12000 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：375W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (DDPAK-3)
- Package / Case：TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
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Overview
The CSD19536KTT is a surface-mount N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a TO-263 (DDPAK-3) package with a maximum drain-source voltage of 100 V and a continuous drain current of 200 A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 2.4 milliohms at 100 A and 10 V gate drive. Key electrical parameters include a maximum gate charge of 153 nC at 10 V, an input capacitance of 12000 pF at 50 V, and a gate-source threshold voltage of 3.2 V at 250 µA. It supports a maximum power dissipation of 375 W at case temperature and operates within a junction temperature range of -55°C to 175°C.
Feature Summary
- NexFET technology optimized for high efficiency and low conduction losses in power conversion applications.
- Robust avalanche-rated capability designed to withstand energy stress during switching events.
- Integrated body diode provides inherent freewheeling functionality for synchronous rectification topologies.
Applications
- High-power density synchronous buck converters
- Point-of-load (POL) voltage regulation modules
- Industrial motor control systems
Procurement Notes
Verify the specific suffix 'KTT' corresponds to the tape-and-reel packaging format required for automated assembly processes. Confirm RoHS compliance status and moisture sensitivity level classification prior to soldering profile selection. Ensure ordering documentation matches the manufacturer's part number exactly to avoid substitution errors with similar NexFET variants.
Selection Notes
Select this component when designing circuits requiring high current handling capabilities exceeding 100 A with minimal conduction loss. Evaluate thermal management requirements based on the 375 W case power dissipation rating and ensure adequate heatsinking or PCB copper area utilization. Consider the 153 nC gate charge for driver selection to achieve optimal switching speeds without excessive drive current demands.
Part Context
This device belongs to the CSD19536 series of NexFET power MOSFETs from Texas Instruments. The series is engineered for high-performance power management solutions, offering a balance of low on-resistance and fast switching characteristics. The KTT suffix specifically denotes the surface-mount DDPAK-3 package configuration suitable for high-current applications.
Replacement Considerations
Direct substitutes within the same family include CSD19536KCS, which offers identical electrical specifications but utilizes a through-hole TO-220-3 package instead of the surface-mount DDPAK-3 form factor. Verify pinout compatibility and thermal interface requirements when considering package changes.
