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Product Detailed Parameters
- Description：MOSFET N-CH 100V 9.7A/50A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：14.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1680 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (3.3x3.3)
- Package / Case：8-PowerTDFN
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Overview
The CSD19537Q3 is a single N-channel NexFET power MOSFET from Texas Instruments, housed in an 8-pin VSON-Clip package measuring 3.3 mm by 3.3 mm with a height of 1 mm. It features a drain-source voltage rating of 100 V and a continuous drain current capacity of 50 A at ambient temperature. The device exhibits a maximum on-resistance of 14.5 mΩ at 10 V gate drive and 21 nC typical gate charge. Thermal performance includes a power dissipation rating of 2.8 W at ambient and 83 W at case temperatures. Operating junction temperature ranges from -55 °C to 150 °C.
Feature Summary
- NexFET technology provides low gate charge for efficient switching
- VSON-Clip package enables high thermal conductivity via direct die attach
- Low on-resistance minimizes conduction losses in power paths
Applications
- DC-DC converter output stages
- Synchronous rectification circuits
- Power management modules
Procurement Notes
Verify the specific ordering suffix against the manufacturer datasheet to confirm packaging type, such as tape and reel or cut tape. Ensure the component meets RoHS compliance requirements for your assembly process. Confirm that the VSON-Clip footprint matches your PCB design guidelines for proper thermal and electrical connection.
Selection Notes
Select this component when a compact surface-mount solution is required for 100 V applications. The low Rds(on) and small footprint make it suitable for space-constrained designs. Evaluate thermal management needs based on the specified power dissipation ratings under your operating conditions.
Part Context
This part belongs to the Texas Instruments NexFET family of power MOSFETs. These devices are engineered for high efficiency and reliability in power conversion systems. The VSON-Clip package variant offers improved thermal performance compared to standard SON packages by allowing direct soldering of the die pad to the PCB ground plane.
Replacement Considerations
Check for compatible parts within the same NexFET series, such as the CSD19537Q3T, which shares identical electrical characteristics but may differ in packaging configuration. Verify pinout compatibility and thermal resistance values before substitution.
