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Product Detailed Parameters
- Description：MOSFET N-CH 100V 14.4A 6WSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：14.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：59mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：454 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 20.2W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-WSON (2x2)
- Package / Case：6-WDFN Exposed Pad
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Overview
The CSD19538Q2 is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 100 V drain-source breakdown voltage and a continuous drain current of 14.4 A. The device exhibits a maximum on-resistance of 59 mOhms at a gate-source voltage of 10 V. It operates within a junction temperature range of -55 °C to +150 °C and has a power dissipation rating of 20.2 W. The component utilizes a WSON-FET-6 surface-mount package and includes an enhancement mode channel configuration.
Feature Summary
- NexFET technology for optimized switching performance
- Low on-resistance for efficient power handling
- Enhanced thermal stability with high junction temperature capability
Applications
- DC-DC converter circuits
- Power management systems
- Motor control applications
Procurement Notes
Verify the specific manufacturer part number against official Texas Instruments documentation to ensure authenticity. Confirm that the component meets required RoHS compliance standards for your region. Check datasheet specifications for thermal resistance values relevant to your PCB layout. Ensure storage conditions adhere to moisture sensitivity level requirements before soldering.
Selection Notes
Select this component when a compact N-channel MOSFET with moderate current capacity is required. The low gate charge supports high-frequency switching operations. Consider the WSON-FET-6 package size constraints during board design. Evaluate thermal management needs based on the specified power dissipation limits in your application environment.
Part Context
This device belongs to the NexFET family from Texas Instruments, designed for power switching applications. It complements other components in power supply designs where efficiency and size are critical. The series offers various voltage and current ratings to suit different system requirements.
