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Product Detailed Parameters
- Description：MOSFET P-CH 8V 7.4A 4PICOSTAR
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：8 V
- Current - Continuous Drain (Id) @ 25°C：7.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：9.9mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.5 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：1390 pF @ 4 V
- FET Feature：-
- Power Dissipation (Max)：600mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：4-PICOSTAR
- Package / Case：4-XFLGA
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Overview
The CSD22205L is a single-channel P-Channel NexFET™ power MOSFET manufactured by Texas Instruments. It features an 8V drain-source voltage rating and a continuous drain current of 7.4A at 25°C. The device offers a maximum on-resistance of 9.9mΩ at Vgs = -4.5V and 1A, with a gate charge of 8.5nC at 4.5V. It utilizes a 4-PICOSTAR surface-mount package with dimensions of 1.2mm x 1.2mm and a height of 0.36mm. The component includes integrated gate-source voltage clamping and ESD protection.
Feature Summary
- Ultra-thin profile with minimal footprint for high-density circuit designs
- Integrated gate-source voltage clamp and electrostatic discharge protection
- Lead-free construction compliant with RoHS standards
Applications
- Battery management systems
- Load switching applications
- Battery protection circuits
Procurement Notes
Verify the specific ordering suffix to confirm packaging type, such as tape and reel or cut tape, as these affect handling but not electrical function. Confirm that the procurement matches the active status indicated in official documentation. Ensure compliance requirements align with project specifications regarding lead-free and halogen-free materials.
Selection Notes
Select this component when space constraints require a small LGA or PICOSTAR footprint alongside low conduction losses. The 8V rating suits low-voltage logic interfaces. Evaluate thermal performance based on the specified power dissipation limits and ensure drive voltages remain within the safe operating area defined by the datasheet parameters.
Part Context
This part belongs to the NexFET™ family of P-Channel power MOSFETs from Texas Instruments. The series focuses on minimizing on-resistance and gate charge within ultra-small packages. The CSD22205L specifically targets applications requiring efficient power control in compact form factors, leveraging silicon chip-level packaging technology.
Replacement Considerations
Consult official substitution guides for compatible NexFET™ devices with similar voltage and current ratings. Verify pinout compatibility and thermal characteristics before replacing. No direct substitute part numbers are confirmed in the provided source material.
