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Product Detailed Parameters
- Description：MOSFET P-CH 12V 2.2A 4DSBGA
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：53mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.8 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：512 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：4-DSBGA (1x1)
- Package / Case：4-UFBGA, DSBGA
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Overview
The CSD23202W10 is a single-channel P-Channel MOSFET from the NexFET A series, manufactured by Texas Instruments. It utilizes silicon technology and features a DSBGA-4 surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 12 V and a continuous drain current of 2.2 A at ambient temperature. The device exhibits a maximum on-resistance of 92 mOhms and a gate threshold voltage of 600 mV. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 1 W.
Feature Summary
- NexFET A series architecture optimized for low on-resistance performance
- Enhancement mode operation for standard switching applications
- Robust thermal handling capability across extended industrial temperature ranges
Applications
- Low-side switching in portable electronic devices
- Power management circuits requiring compact form factors
- Battery protection systems utilizing small footprint components
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging configuration. Confirm that the component meets RoHS3 compliance requirements for your target market. Cross-reference the active status with the latest Texas Instruments product lifecycle notifications to avoid obsolescence risks during production planning.
Selection Notes
Select this component when design constraints demand a minimal board area solution due to the DSBGA-4 package. Ensure the application voltage does not exceed the 12 V drain-source limit. Verify that the required gate drive levels are compatible with the specified threshold voltage characteristics for reliable turn-on and turn-off transitions.
Part Context
This part belongs to the CSD23202W10 series of discrete semiconductors. It is categorized under single FETs and MOSFETs within the broader transistor family. The component represents Texas Instruments' integration of advanced silicon processes into ultra-small packages for efficient power control.
Replacement Considerations
Consult the official datasheet for direct pin-compatible alternatives within the same NexFET portfolio. Verify that any substitute maintains identical package dimensions and electrical ratings to ensure seamless integration without circuit redesign.
