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Product Detailed Parameters
- Description：MOSFET P-CH 12V 1.8A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：116mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.23 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：234 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD23280F3 is a -12-V P-channel NexFET power MOSFET from Texas Instruments. It features an ultra-low profile LGA package measuring 0.6 mm x 0.7 mm with a height of 0.36 mm. The device offers a typical on-resistance (RDS(on)) of 116 mOhm and includes gate ESD protection. It is designed for surface-mount applications requiring compact form factors.
Feature Summary
- Ultra-low profile LGA package for space-constrained designs
- Integrated gate ESD protection for enhanced reliability
- P-channel configuration optimized for low-side switching
Applications
- Portable consumer electronics
- Battery-powered devices
- Power management modules
Procurement Notes
Verify the specific ordering suffix, such as 'T' for tape and reel, against your manufacturing requirements. Confirm the package dimensions and thermal characteristics match your PCB layout constraints. Ensure compatibility with your assembly process specifications before finalizing procurement.
Selection Notes
Select this component when a small footprint and low on-resistance are critical for -12 V P-channel applications. Consider the thermal performance within the LGA package relative to your system's power dissipation needs. Evaluate the gate charge characteristics if high-speed switching is required in your design.
Part Context
This part belongs to Texas Instruments' FemtoFET and NexFET families, which focus on miniaturization and efficiency. These series target modern portable electronics where board space is limited. The technology integrates advanced silicon processes to reduce resistance while maintaining robust electrical characteristics.
Replacement Considerations
Check for direct substitutes within the same -12 V P-channel LGA family. Verify pinout compatibility and electrical parameters such as RDS(on) and voltage ratings. Consult official substitution guides for validated alternatives that meet identical mechanical and functional specifications.
