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Product Detailed Parameters
- Description：MOSFET P-CH 12V 5.4A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：35mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.2 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：628 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD23285F5 is a P-channel enhancement mode MOSFET from the FemtoFET series, manufactured by Texas Instruments. It features a 12V drain-source voltage (Vdss) and supports a continuous drain current of 5.4A at 25°C. The device offers a maximum on-resistance of 35 milliohms at 4.5V gate drive and 1A current. Key electrical parameters include a gate charge of 4.2nC at 4.5V, an input capacitance of 628pF at 6V, and a threshold voltage of 950mV max at 250µA. It operates within a junction temperature range of -55°C to 150°C with a power dissipation of 500mW.
Feature Summary
- Ultra-low gate charge for efficient switching performance
- Low on-resistance optimized for high-current applications
- Small footprint surface-mount package design
Applications
- Power management circuits
- Battery protection systems
- Load switch implementations
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS3 compliance and MSL level 1 status during sourcing. Ensure packaging type matches project requirements, as options include tape and reel or cut tape formats. Cross-reference datasheet revisions to confirm parameter consistency before final procurement decisions.
Selection Notes
Select this component for designs requiring compact P-channel switching solutions with low Rds(on). Consider the 12V rating and 5.4A current capability for appropriate load matching. Evaluate thermal management needs given the 500mW dissipation limit in the small 3-PICOSTAR package. Verify gate drive voltages align with the specified 1.5V and 4.5V thresholds for optimal performance.
Part Context
This part belongs to the FemtoFET family, designed for space-constrained power applications. It serves as a surface-mount alternative to larger discrete packages while maintaining robust electrical characteristics. The component integrates advanced silicon technology to minimize switching losses and improve overall system efficiency in portable and industrial electronics.
Replacement Considerations
Check for compatible P-channel MOSFETs with similar Vdss and Rds(on) specifications. Verify pinout compatibility if substituting directly into existing PCB layouts. Ensure thermal resistance and package dimensions match the original design constraints.
