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Product Detailed Parameters
- Description：MOSFET P-CH 12V 3.5A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：76mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.35 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：235 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD23382F4T is a single-channel P-Channel enhancement-mode MOSFET from the NexFET family, manufactured by Texas Instruments. It utilizes silicon technology and is housed in a PICOSTAR-3 surface-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 12 V and a continuous drain current (Id) of 3.5 A. The device features a maximum on-resistance (Rds On) of 199 mOhms at specified gate-source voltages. Gate-source voltage limits are defined between -8 V and +8 V, with a threshold voltage (Vgs th) of 1.1 V. Total gate charge (Qg) is 1.04 nC. Operating temperatures range from -55°C to +150°C junction temperature, with power dissipation rated at 500 mW.
Feature Summary
- NexFET technology optimized for low gate charge and fast switching performance
- Enhancement-mode P-Channel configuration for high-side load switching applications
- PICOSTAR-3 compact surface-mount packaging designed for space-constrained designs
Applications
- High-side load switches in portable consumer electronics
- Power management circuits in battery-operated devices
- DC-DC converter output stages requiring low on-resistance
Procurement Notes
Verify the specific ordering suffix F4T corresponds to the required tape and reel quantity when sourcing. Confirm that the PICOSTAR-3 package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the 500 mW power dissipation rating under expected operating conditions. Cross-reference the datasheet revision date to ensure compatibility with your design specifications.
Selection Notes
Select this component when a 12 V P-Channel MOSFET with approximately 200 mOhm on-resistance is required in a minimal footprint. Compare against N-Channel alternatives if negative gate drive is unavailable. Consider the 1.04 nC gate charge for driving capability requirements. Evaluate the -55°C to +150°C operating range against environmental constraints. Verify that the 3.5 A current rating meets peak load demands without exceeding thermal limits.
Part Context
This part belongs to Texas Instruments' NexFET series, which focuses on improving power efficiency through reduced gate charge and lower on-resistance. The CSD23382F4T specifically targets applications needing reliable P-Channel switching in small form factors. It complements other discrete semiconductors in TI's portfolio for complete power solution designs.
Replacement Considerations
Check for direct pin-compatible substitutes within the CSD23382 series or other NexFET P-Channel variants with similar Vds and Rds On specifications. Verify package compatibility before substitution.
