ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 20V 20A 6WSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：23.9mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.7 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：655 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2.9W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-WSON (2x2)
- Package / Case：6-WDFN Exposed Pad
Download product information
Overview
The CSD25310Q2 is a single-channel P-Channel NexFET power MOSFET manufactured by Texas Instruments. It features a 20 V drain-source breakdown voltage and supports a continuous drain current of 20 A. The device exhibits a maximum on-resistance of 19.9 mOhms at -4.5 V gate-source voltage. Gate-source voltage limits are defined as ±8 V, with a typical threshold voltage of 1.1 V. Total gate charge is specified at 4.7 nC. The component operates within a temperature range of -55 °C to +150 °C junction temperature and utilizes a WSON-6 surface-mount package.
Feature Summary
- NexFET technology designed for low conduction losses and fast switching performance
- Enhancement mode operation optimized for synchronous rectification applications
- Robust thermal management capabilities supporting high junction temperatures up to 150 °C
Applications
- Synchronous buck converters in load management systems
- DC/DC converter output stages
- Power distribution networks in portable electronics
Procurement Notes
Verify the specific ordering suffix against the manufacturer datasheet to confirm tape and reel specifications. Ensure compatibility with standard WSON-6 footprint dimensions during PCB layout. Confirm RoHS compliance status through official documentation before integration into regulated assemblies.
Selection Notes
Select this component for designs requiring low on-resistance in compact form factors. Evaluate thermal dissipation requirements based on the 2.9 W power dissipation rating. Consider gate charge characteristics when driving high-frequency switching circuits to minimize switching losses.
Part Context
This part belongs to the CSD25310Q2 series of NexFET power MOSFETs from Texas Instruments. The series focuses on delivering high efficiency in power conversion applications through advanced silicon process technologies. It serves as a key component in modern power management integrated circuits.
Replacement Considerations
Consult official substitution guides for compatible alternatives such as CSD25402Q3A or CSD25404Q3. Verify pinout compatibility and electrical parameter equivalence before replacing existing components in established designs.
