CSD25402Q3AT

$0.75

Description：MOSFET P-CH 20V 15A/76A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:45bb3864292c Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 15A/76A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：8.9mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id：1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.7 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1790 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-VSONP (3x3.3)
Package / Case：8-PowerVDFN

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CSD25402Q3AT

Overview

The CSD25402Q3AT is a 20 V P-Channel NexFET Power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in a DSBGA-9 surface-mount package. The device features a continuous drain current of 4 A and a maximum on-resistance of 52 mOhms. It operates within a temperature range of -55 °C to +150 °C, with a power dissipation rating of 500 mW. Key electrical characteristics include a gate-source voltage limit of ±6 V, a threshold voltage of 750 mV, and a total gate charge of 5.8 nC.

Feature Summary

P-Channel configuration for high-side switching applications
NexFET technology optimized for low on-resistance
DSBGA-9 compact surface-mount packaging

Applications

DC-DC converter circuits
Power management modules
Battery protection systems

Procurement Notes

Verify the specific suffix 'T' indicates tape-and-reel packaging when ordering. Confirm the component matches the exact 20 V P-Channel specification required for the target circuit design. Ensure compatibility with the DSBGA-9 footprint during PCB layout. Check for RoHS compliance status through official manufacturer documentation prior to integration.

Selection Notes

Select this component for applications requiring a 20 V P-Channel MOSFET with moderate current handling capabilities. The 52 mOhm on-resistance supports efficient power conversion in space-constrained designs utilizing the DSBGA-9 package. Evaluate thermal performance against the 500 mW dissipation limit for the intended operating environment.

Part Context

This part belongs to the Texas Instruments NexFET family of power MOSFETs. The series focuses on delivering enhanced performance in small form factors. The CSD25402Q3AT specifically addresses needs for low-voltage, high-efficiency switching solutions in portable and industrial electronics.