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Product Detailed Parameters
- Description：MOSFET P-CH 20V 1.6A 3PICOSTAR
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：205mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.959 nC @ 4.5 V
- Vgs (Max)：-12V
- Input Capacitance (Ciss) (Max) @ Vds：198 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD25483F4 is a 20 V P-Channel FemtoFET MOSFET manufactured by Texas Instruments. It features a maximum drain-source breakdown voltage of 20 V and a continuous drain current of 1.7 A at 25°C. The device exhibits a typical on-resistance of 96 mΩ at a gate-source voltage of 4.5 V. Key electrical parameters include a gate charge of 1.2 nC, an input capacitance of 190 pF, and a power dissipation rating of 500 mW. It operates within a temperature range of -55°C to +150°C junction temperature.
Feature Summary
- Utilizes the FemtoFET technology platform for optimized switching performance.
- Provides high-speed switching capabilities with low gate charge characteristics.
- Designed for surface-mount applications in compact power management circuits.
Applications
- DC/DC converter modules
- Power management integrated circuits (PMICs)
- Load switch implementations
Procurement Notes
Verify the specific datasheet revision and ordering information directly from Texas Instruments or authorized distributors. Confirm that the component meets all required RoHS standards and environmental specifications for your intended application before finalizing procurement decisions.
Selection Notes
Select this component when a 20 V P-Channel MOSFET with low on-resistance and fast switching speeds is required. Consider the 3-PICOSTAR package size for space-constrained designs. Ensure the thermal management strategy supports the 500 mW power dissipation limit under operating conditions.
Part Context
This part belongs to the CSD2548x series of P-Channel FemtoFET MOSFETs from Texas Instruments. These devices are engineered for high-efficiency power conversion applications requiring small form factors and rapid transient response capabilities.
Replacement Considerations
Compatible substitutes within the same family include the CSD25481F4 and CSD25484F4. Verify pinout compatibility and electrical parameter alignment before substituting these parts in existing designs.
