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Product Detailed Parameters
- Description：MOSFET P-CH 20V 1.6A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：205mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.96 nC @ 4.5 V
- Vgs (Max)：-12V
- Input Capacitance (Ciss) (Max) @ Vds：198 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD25483F4T is a P-channel enhancement-mode MOSFET from the FemtoFET series by Texas Instruments. It features a maximum drain-source voltage of 20 V and a continuous drain current of 1.6 A at ambient temperature. The device utilizes a PICOSTAR (YJC) surface-mount package with dimensions of 1.04 mm length, 0.64 mm width, and 0.35 mm height. Key electrical parameters include a maximum on-resistance of 245 mΩ, a gate threshold voltage range of 0.7 V to 1.2 V, and typical gate charge of 0.913 nC at 4.5 V. It operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Ultra-small PICOSTAR surface-mount package for high-density PCB layouts
- Integrated gate ESD protection for enhanced reliability
- Low on-resistance optimized for efficient power switching
Applications
- Portable consumer electronics requiring compact power management
- Battery-powered devices needing efficient load switching
- General-purpose low-voltage power control circuits
Procurement Notes
Verify the specific suffix F4T against the official Texas Instruments datasheet to confirm pinout and electrical characteristics match your design requirements. Ensure the component meets RoHS3 compliance standards if required by your manufacturing regulations. Cross-reference the mechanical drawing for the PICOSTAR package dimensions to validate footprint compatibility during the PCB layout phase.
Selection Notes
Select this component when space constraints are critical due to its minimal footprint. Consider the 20 V rating and 1.6 A current capability for low-voltage applications. Evaluate the thermal performance based on the 500 mW power dissipation rating at ambient temperature. Compare gate charge specifications against driving capabilities to ensure adequate switching speed without excessive drive current demands.
Part Context
This part belongs to the FemtoFET family, which focuses on miniaturization for portable applications. It is a single N-channel or P-channel MOSFET designed for surface mount technology. The series emphasizes reduced size while maintaining robust electrical performance for modern electronic devices.
Replacement Considerations
Check for direct substitutes within the same FemtoFET series with compatible voltage and current ratings. Verify that alternative packages maintain similar thermal and mechanical properties. Confirm that any replacement offers equivalent or better on-resistance and gate charge characteristics.
