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Product Detailed Parameters
- Description：MOSFET P-CH 20V 2.5A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 8V
- Rds On (Max) @ Id, Vgs：94mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.42 nC @ 4.5 V
- Vgs (Max)：-12V
- Input Capacitance (Ciss) (Max) @ Vds：230 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD25484F4T is a P-channel power MOSFET from Texas Instruments' FemtoFET series, housed in a compact 3-PICOSTAR surface-mount package. It features a drain-source voltage rating of 20 V and a continuous drain current of 2.5 A at ambient temperature. The device exhibits a maximum gate threshold voltage of 1.2 V at 250 µA and a typical gate charge of 1.42 nC at 4.5 V. Input capacitance is specified at 230 pF when the drain-source voltage is 10 V. Power dissipation capability is rated at 500 mW, with an operating junction temperature range spanning from -55°C to 150°C.
Feature Summary
- Utilizes FemtoFET technology for optimized switching performance in small form factors.
- Designed for low-voltage applications with a 20 V breakdown rating.
- Features a highly compact 3-pin PICOSTAR package for space-constrained designs.
Applications
- Low-side switching in portable consumer electronics
- Power management circuits in battery-operated devices
- General-purpose load switching in embedded systems
Procurement Notes
Verify the specific suffix 'T' indicates tape-and-reel packaging configuration. Confirm RoHS3 compliance status as per the latest manufacturer documentation. Ensure the ordering part number matches the exact pinout and thermal characteristics required for the target PCB layout. Cross-reference datasheet revisions to confirm parameter consistency.
Selection Notes
Select this component for applications requiring a P-channel switch with moderate current handling in minimal footprint constraints. Evaluate thermal resistance requirements against the 500 mW dissipation limit. Compare gate charge specifications against driver capabilities to ensure adequate switching speeds. Verify that the 20 V rating provides sufficient margin for the system's supply voltage.
Part Context
This component belongs to Texas Instruments' FemtoFET family, which focuses on high-density power solutions. The PICOSTAR package offers a significantly smaller footprint compared to traditional SOT-23 packages, facilitating miniaturization in modern mobile and IoT hardware designs while maintaining reliable thermal performance.
Replacement Considerations
Consult official substitution guides for compatible alternatives within the CSD25xxx series. Verify pin compatibility and electrical parameters before replacing. No direct public substitute part numbers are confirmed in available data.
