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Product Detailed Parameters
- Description：MOSFET P-CH 20V 3.6A 3LGA
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：76mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id：1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.33 nC @ 4.5 V
- Vgs (Max)：-20V
- Input Capacitance (Ciss) (Max) @ Vds：385 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-LGA (0.73x0.64)
- Package / Case：3-XFLGA
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Overview
The CSD25501F3T is a –20V P-Channel FemtoFET™ MOSFET designed to minimize footprint in handheld and mobile applications. It features an on-resistance of 64mΩ at VGS = -4.5V and supports a continuous drain current of 3.6A at Ta. The device operates within a junction temperature range of -55°C to +150°C and is available in a 3-LGA package measuring 0.73x0.64mm.
Feature Summary
- Optimized for minimal footprint in space-constrained designs
- P-Channel configuration with low on-resistance
- High thermal stability up to 150°C junction temperature
Applications
- Handheld devices
- Mobile applications
- Battery-powered systems
Procurement Notes
Verify the specific ordering suffix, such as 'T', which indicates tape and reel packaging. Confirm that the component matches the exact electrical specifications required for the target circuit design. Ensure compatibility with the intended surface mount assembly process and validate against the latest manufacturer datasheet for any revisions.
Selection Notes
Select this component when a compact P-Channel solution is required for low-voltage switching. The small 3-LGA package size makes it suitable for dense PCB layouts. Consider the 64mΩ on-resistance for efficiency requirements and ensure the thermal management strategy accommodates the 500mW power dissipation rating at ambient temperature.
Part Context
This part belongs to Texas Instruments' FemtoFET™ family, which focuses on ultra-small form factors. It is categorized under single FETs and MOSFTs within the broader semiconductor portfolio. The technology targets modern portable electronics where board space is a critical constraint.
Replacement Considerations
Check for direct substitutes within the same FemtoFET™ series or other P-Channel MOSFETs with compatible voltage ratings and package dimensions. Verify pinout compatibility and electrical parameter equivalence before substitution.
