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The CSD85301Q2T is a dual N-channel MOSFET from Texas Instruments, part of the NexFET family. It features a 20V drain-source voltage rating and a continuous drain current of 7A. The device has a maximum on-resistance of 24mΩ at room temperature. It operates within a junction temperature range of -55°C to +150°C. The component utilizes a PICOSTAR-4 surface-mount package. Key electrical parameters include a gate-source voltage threshold of 680mV and a total gate charge of 6nC. Rise and fall times are specified at 54ns and 99ns respectively.
Verify the specific ordering suffix matches the required tape and reel quantity. Confirm that the component meets AEC-Q101 standards if automotive qualification is mandatory for the target application. Ensure the datasheet version aligns with the manufacturing date code to avoid discrepancies in thermal or electrical specifications during procurement.
Select this component when a compact dual N-channel solution is required for low-voltage automotive applications. The 20V rating suits 12V nominal systems. Compare the 24mΩ on-resistance against system loss requirements. Consider the PICOSTAR-4 package size constraints relative to PCB layout capabilities and thermal dissipation needs for the intended current load.
This part belongs to Texas Instruments' NexFET portfolio, designed for high-efficiency power management. It complements other low-voltage MOSFETs in the series by offering a dual-channel option in a minimal footprint. The Q2 suffix typically indicates automotive grade qualification, distinguishing it from standard commercial variants within the same electrical specification family.
Direct substitutes must match the 20V/7A/24mΩ specifications and PICOSTAR-4 package. Verify pinout compatibility before substitution. Other TI parts like CSD85302L share similar electrical traits but may differ in package or exact Rds(on) values. Always consult the latest datasheets for parameter variations between generations.