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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 20A 8LSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：20A
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：900pF @ 15V
- Power - Max：6W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerLDFN
- Supplier Device Package：8-LSON (3.3x3.3)
- Grade：-
- Qualification：-
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Overview
The CSD87330Q3D is a 30-V N-channel synchronous buck NexFET power block manufactured by Texas Instruments. It features an integrated dual MOSFET configuration in an 8-LSON package measuring 3.3 mm x 3.3 mm. The device supports a continuous drain current of 20 A and offers a maximum power dissipation of 6 W. Designed for high-efficiency applications, it operates within a temperature range of -55°C to +150°C.
Feature Summary
- Optimized design specifically for synchronous buck converter applications
- Integrated dual N-channel MOSFETs in a compact 3.3 mm x 3.3 mm footprint
- High-current capability with low on-resistance for improved efficiency
Applications
- Synchronous buck power conversion circuits
- Point-of-load (POL) voltage regulation modules
- High-density DC-DC converter designs
Procurement Notes
Verify the specific revision status and ordering suffixes when sourcing this component. Ensure that the procurement channel provides original manufacturer documentation to confirm authenticity. Check for any regional distribution restrictions or specific handling requirements associated with the LSON package type during acquisition.
Selection Notes
Select this component for designs requiring high current density in a minimal board area. The integrated power block architecture simplifies layout compared to discrete solutions. Consider thermal management capabilities given the 6 W dissipation rating and ensure gate drive voltages align with the specified N-channel requirements for optimal switching performance.
Part Context
This part belongs to Texas Instruments' NexFET family of power blocks. These devices integrate high-side and low-side MOSFETs into a single package to reduce parasitic inductance and improve switching speeds. The CSD87330Q3D represents a solution for space-constrained, high-performance power management systems.
Replacement Considerations
Consult official substitution lists for compatible NexFET power blocks with similar voltage and current ratings. Verify pin compatibility and thermal characteristics before replacing with alternative part numbers from the same manufacturer series.
