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The CTA2P1N-7-F is a complex transistor array combining an MMBT4403 PNP bipolar junction transistor and a 2N7002 N-channel MOSFET within a single SOT-363 surface-mount package. The device integrates a PNP transistor rated for -40V collector-emitter voltage and -600mA continuous collector current, alongside an N-channel MOSFET with a 60V drain-source breakdown voltage and 115mA continuous drain current. Total power dissipation is limited to 150mW at 25°C ambient temperature.
This specific part number is officially obsolete and discontinued by Diodes Incorporated. Verify availability through authorized distributors or secondary markets only. Confirm that any available units are genuine components from original manufacturing runs. Do not assume standard lead times or active production support. Review datasheet revision history for potential design changes prior to integration.
Select this component only if the specific combination of MMBT4403 and 2N7002 characteristics matches the circuit requirements exactly. Evaluate the thermal constraints carefully as total power dissipation is shared between both internal devices. Consider the low continuous current ratings compared to standalone discrete transistors when designing load paths.
This device belongs to the CTA series of complex transistor arrays manufactured by Diodes Incorporated. It serves as a monolithic solution for applications needing paired PNP and N-channel switching capabilities without occupying multiple board locations. The series utilizes standard plastic molding compounds and matte tin plating for terminal connections.
The datasheet identifies the CTA2N1P as the NPN/P-Channel complement variant. No other direct substitute part numbers are documented in the official specifications.