CTA2P1N-7

Overview

The CTA2P1N is a complex transistor array in an SOT-363 package, combining an MMBT4403 PNP bipolar junction transistor and a 2N7002 N-channel MOSFET. The PNP element provides a collector-emitter voltage of -40V and continuous collector current of -600mA. The N-channel MOSFET offers a drain-source voltage of 60V and continuous drain current of 115mA. Total device power dissipation is rated at 150mW with a thermal resistance of 833°C/W. Operating temperature range spans from -55°C to +150°C.

Feature Summary

• Integrates a PNP BJT and an N-channel MOSFET into a single surface-mount component
• Provides complementary transistor and MOSFET functionality within a compact SOT-363 case
• Designed for applications requiring mixed-signal discrete switching elements

Applications

• Mixed-signal circuit designs requiring both bipolar and field-effect switching
• Power management circuits utilizing combined transistor and MOSFET control
• Embedded systems needing compact discrete logic or interface solutions

Procurement Notes

This part number is officially marked as obsolete and discontinued by Diodes Incorporated. Verify availability through authorized distributors only, noting that stock may be limited or exhausted. Confirm the specific revision level and date code if sourcing remaining inventory, as manufacturing has ceased. Ensure compliance with RoHS standards for units produced after the specified green molding compound implementation date.

Selection Notes

Select this component when a design requires both a PNP transistor and an N-channel MOSFET in a minimal footprint. The integrated nature reduces board space compared to separate discrete components. Consider the total power dissipation limits and thermal resistance when designing heat management strategies. Verify that the voltage and current ratings of both internal elements meet the specific application requirements.

Part Context

The CTA2P1N belongs to the family of complex transistor arrays manufactured by Diodes Incorporated. It serves as a complement to the CTA2N1P, which combines an NPN transistor with a P-channel MOSFET. These devices are designed to simplify circuit layouts by consolidating multiple semiconductor functions into a single small outline package, specifically targeting space-constrained electronic designs.

Replacement Considerations

No direct public substitute part numbers are documented for this obsolete component.