CTLDM303N-M832DS TR

Overview

The CTLDM303N-M832DS TR is a surface-mount dual N-channel enhancement-mode silicon MOSFET in the TLM832DS package. It features a drain-source voltage of 30 V and a continuous drain current of 3.6 A. The device offers a maximum on-resistance of 0.078 Ω at VGS=2.5V and low gate charge characteristics. Power dissipation is rated at 1.65 W with a thermal resistance of 76 °C/W. Operating junction temperature ranges from -55 to +150 °C.

Feature Summary

• Dual N-channel configuration for high-speed pulsed amplifier and driver applications
• Low on-resistance optimized for energy efficiency
• Low gate charge supporting fast switching performance

Applications

• DC-DC converters
• Drive circuits
• Power management systems

Procurement Notes

Verify component authenticity through official Central Semiconductor channels or authorized distributors. Confirm datasheet revision status and check for Product Change Notifications (PCNs) prior to procurement. Ensure compliance with RoHS directives if required by the specific application environment.

Selection Notes

Select this component for designs requiring compact dual-N-channel integration with moderate current handling capabilities. Evaluate thermal constraints carefully, as power dissipation is limited to 1.65 W without significant copper pad area. Verify that the 30 V rating aligns with the system's maximum operating voltage.

Part Context

This part belongs to Central Semiconductor’s dual MOSFET portfolio designed for space-constrained surface mount applications. It utilizes the TLM832DS case outline, providing an efficient footprint for integrating two independent N-channel transistors within a single package structure.

Replacement Considerations

Central Semiconductor has issued a discontinuation notice for this product line. No direct replacement part numbers are currently available from the manufacturer. Designers should consult engineering support for potential alternate sources.