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The CTLDM8002A-M621H is a surface-mount P-channel enhancement-mode MOSFET in a TLM621H package. It features a Drain-Source Voltage (VDS) of 50 V and Continuous Drain Current (ID) of 280 mA. The device has a maximum Gate-Source Voltage (VGS) of 20 V and Power Dissipation (PD) of 1.6 W. Electrical characteristics include a Threshold Voltage (VGS(th)) range of 1.0 to 2.5 V, On-State Resistance (rDS(on)) of 2.5 Ω at VGS=10V/ID=500mA, and Total Gate Charge (Qg) of 0.72 nC. Operating temperature ranges from -65°C to +150°C.
This component is officially classified as End of Life by Central Semiconductor Corp. No new production units are available; only existing stock may be sourced. Verify the specific ordering suffix against current inventory lists before finalizing any procurement actions.
Select this part for compact designs requiring a P-channel MOSFET with 50 V rating and logic-level compatibility. Ensure the application operates within the specified continuous drain current limits and junction temperature range. Confirm availability constraints due to the discontinued status.
The CTLDM8002A-M621H belongs to the TLM621H family of small, very low profile surface-mount devices manufactured by Central Semiconductor Corp. This series utilizes a specialized thermal-efficient package designed for space-constrained applications.
No direct replacement part numbers are listed in the official documentation. The manufacturer indicates that no substitutes are currently available for this discontinued product line.
The maximum Drain-Source Voltage (VDS) is 50 V.
Yes, the datasheet specifies it as Logic Level Compatible with a low threshold voltage.