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CUS10I30A(TE85L,QM is listed in the Single Diodes range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is DIODE SCHOTTKY 30V 1A USFLAT. Review the specifications below when checking this part for your BOM.
CUS10I30A(TE85L,QM is a surface-mount Schottky barrier diode manufactured by Toshiba Semiconductor and Storage. It features a maximum repetitive reverse voltage of 30V and a forward current rating of 1A. The device utilizes US-FLAT packaging with dimensions of 1.25x2.5mm. Key electrical characteristics include a typical forward voltage of 0.45V at 1A and a maximum reverse leakage current of 60µA at 30V. It operates within a junction temperature range up to 150°C and supports storage temperatures from -55°C to 150°C.
Verify the specific suffix TE85L,QM against official Toshiba documentation to confirm tape and reel specifications. Ensure compatibility with automated pick-and-place equipment due to the small US-FLAT footprint. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before finalizing procurement orders.
Select this component when a compact Schottky diode is required for 30V applications with 1A current handling. Compare forward voltage specifications against system efficiency requirements. Evaluate the US-FLAT package dimensions against available PCB real estate constraints. Consider thermal management needs given the small surface area of the package.
This part belongs to Toshiba's discrete Schottky diode portfolio designed for high-efficiency power management. It complements other small-signal and rectifier devices in the CRS and CUHS series. The product targets modern electronics requiring miniaturization and improved power conversion efficiency in portable and industrial applications.
BFR380FH6327XTSA1 and MRF454 are listed as similar alternatives by distributors, though their technical suitability requires verification against specific circuit requirements.
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