CWDM3011N TR13 PBFREE

$0.93

Description：MOSFET N-CH 30V 11A 8SOIC
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:36ac44dae0a5 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 11A 8SOIC
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.3 nC @ 5 V
Vgs (Max)：20V
Input Capacitance (Ciss) (Max) @ Vds：860 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

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CWDM3011N TR13 PBFREE

Overview

The CWDM3011N TR13 PBFREE is a surface-mount silicon N-channel enhancement-mode MOSFET manufactured by Central Semiconductor Corp. It features a maximum drain-source voltage of 30 V and a continuous drain current of 11 A at 25°C. The device offers a low on-resistance of 20 mΩ at VGS=10V and ID=11A, with a total gate charge of 6.3 nC. Power dissipation is rated at 2.5 W, and the operating junction temperature range spans from -55°C to +150°C. It is housed in an SOIC-8 package.

Feature Summary

Designed for high-speed pulsed amplifier and driver applications
Offers beneficially low rDS(ON) for energy efficiency
Features low gate charge and low threshold voltage

Applications

Load/Power switches
DC-DC converter circuits
Power management

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm plating options. The PBFREE suffix indicates lead-free plating compliance. Confirm the TR13 designation matches the required reel quantity and packaging format for your assembly line. Cross-reference the marking code C3011N for physical identification upon receipt.

Selection Notes

Select this component when designing circuits requiring a 30 V N-channel MOSFET capable of handling 11 A continuous current. The low gate charge of 6.3 nC supports efficient switching in driver applications. Ensure thermal management accommodates the 2.5 W power dissipation rating within the specified -55°C to +150°C junction temperature range.

Part Context

This part belongs to the CMxxDM series of surface-mount silicon MOSFETs from Central Semiconductor. It utilizes an SOIC-8 case configuration with specific pin assignments: Source pins 1, 2, 3; Gate pin 4; and Drain pins 5, 6, 7, 8. The marking code on the package is C3011N.