CWDM3011P TR13 PBFREE

$0.86

Description：MOSFET P-CH 30V 11A 8SOIC
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c271038339c0 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 11A 8SOIC
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
Vgs (Max)：20V
Input Capacitance (Ciss) (Max) @ Vds：3100 pF @ 8 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

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CWDM3011P TR13 PBFREE

Overview

The CWDM3011P is a surface-mount silicon P-channel enhancement-mode MOSFET designed for high-speed pulsed amplifier and driver applications. It features a maximum drain-source voltage of 30V, a continuous drain current of 11A, and a power dissipation rating of 2.5W at 25°C. The device operates within a junction temperature range of -55°C to +150°C. Key electrical characteristics include a maximum on-resistance of 20mΩ at VGS=10V and ID=11A, and a total gate charge of 80nC.

Feature Summary

High current capability with low on-resistance
Low gate charge for efficient switching
Designed for high-speed pulsed amplifier and driver applications

Applications

Load switches
Power switches
DC-DC converter circuits
Power management systems

Procurement Notes

Verify the specific ordering suffix required for plating options when purchasing. The standard part number includes the PBFREE designation for lead-free compliance. Confirm package availability and manufacturer documentation directly with Central Semiconductor Corp or authorized distributors to ensure component authenticity and correct specification alignment.

Selection Notes

Select this component for designs requiring a P-channel MOSFET with a 30V breakdown voltage and 11A continuous current handling. Ensure the driving circuit can provide sufficient gate voltage to achieve the specified low on-resistance values. Consider the thermal resistance and power dissipation limits for proper heat management in the target application environment.

Part Context

This component belongs to the CWDM series of surface-mount silicon MOSFETs manufactured by Central Semiconductor Corp. It utilizes an SOIC-8 package configuration. The marking code for identification is C3011P. The datasheet revision R2 was published on August 10, 2018.