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Product Detailed Parameters
- Description：MOSFET N-CH 100V 2A SOT-89
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：300mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6 nC @ 5 V
- Vgs (Max)：20V
- Input Capacitance (Ciss) (Max) @ Vds：550 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-89
- Package / Case：TO-243AA
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Overview
The CXDM1002N TR PBFREE is a surface-mount silicon N-channel enhancement-mode MOSFET designed for high-speed pulsed amplifier and driver applications. It features a 100V drain-source voltage, 2.0A continuous drain current, and low on-resistance of 140mΩ typical at VGS=4.5V. The device operates within a junction temperature range of -55°C to +150°C and provides 2kV ESD protection.
Feature Summary
- Logic level compatibility with low threshold voltage
- High breakdown voltage capability
- Low gate charge for fast switching
Applications
- Load and power switches
- Power supply converter circuits
- Battery powered portable equipment
Procurement Notes
Verify component status before procurement as the SOT-89 package has been discontinued and classified as End of Life. Orders may be accepted only from available inventory or through Last Time Buy provisions. Confirm final shipment dates and minimum order quantities directly with Central Semiconductor Customer Service.
Selection Notes
Select this component for designs requiring high-voltage N-channel switching in compact surface-mount layouts. Ensure thermal management accommodates the specified power dissipation and thermal resistance values. Verify that logic-level drive voltages align with the low threshold voltage specifications for optimal performance.
Part Context
This part belongs to the Central Semiconductor CXDM series of high-voltage silicon MOSFETs. These devices are engineered for robust performance in demanding electronic environments, offering a balance of high voltage handling and efficient conduction characteristics suitable for modern power management systems.
Replacement Considerations
No replacement part numbers are currently available for the CXDM1002N. Contact Central Semiconductor Customer Service for assistance in locating an alternate source if no replacement is provided.
