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The CYTA44D is a surface mount dual, isolated high voltage NPN silicon transistor manufactured by Central Semiconductor Corp. Encased in an epoxy molded SOT-228 package, the device utilizes an epitaxial planar process for robust performance. It features two independent transistors with a maximum collector-emitter voltage of 400 V and a continuous collector current rating of 300 mA per element. The unit supports a power dissipation of 2.0 W at 25°C ambient temperature and operates within a junction temperature range of -65 to +150 °C.
Verify the specific ordering suffix required for your application before purchase. The manufacturer offers distinct plating options that must be explicitly requested during the ordering process. Confirm whether lead-free or tin/lead plating is necessary for your assembly requirements to ensure compliance with project specifications.
Select this component when a dual NPN configuration with high voltage isolation is required in a surface mount format. Ensure the design accommodates the 2.0 W power dissipation limit and the thermal resistance characteristics of the SOT-228 package. Verify that the 400 V collector-emitter voltage meets the peak operating demands of the target circuit.
This part belongs to the Central Semiconductor SUPERmini™ series of high voltage discrete semiconductors. These devices are engineered for compact designs requiring multiple isolated active elements. The product line emphasizes reliability through epitaxial planar manufacturing processes tailored for surface mount technology integration.
Official documentation lists CYTA44D BK and CYTA44D TR as End of Life items with no direct replacement part numbers provided.