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The CZDM1003N is a surface-mount silicon N-channel enhancement-mode MOSFET designed for motor control and relay driver applications. It features a drain-source voltage of 100V, continuous drain current of 3.0A, and maximum pulsed drain current of 12A. The device offers low on-resistance (rDS(ON)) and low gate charge. Maximum power dissipation is 2.0W with a thermal resistance (ΘJA) of 62.5°C/W. Operating junction temperature ranges from -55°C to +150°C.
This component has been transitioned to End of Life status by Central Semiconductor Corp. No further orders can be accepted unless inventory is available on hand. Replacement part numbers are not provided by the manufacturer. Verify availability through authorized distributors or stock-only channels before design finalization.
Select this component only if legacy compatibility is required, as it is discontinued. Ensure designs account for the 100V rating and 3.0A continuous current limits. Consider alternative active components for new designs due to limited future supply availability.
The CZDM1003N belongs to Central Semiconductor's discrete semiconductor product line, specifically within the MOSFET category. It utilizes an SOT-223 package for surface mount installation. The device is classified as a single N-channel enhancement-mode field-effect transistor intended for general-purpose switching applications.
No official replacement part numbers are listed by Central Semiconductor Corp. The datasheet indicates 'N/A' for replacements. Users must source alternatives independently or utilize remaining stock.