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Product Detailed Parameters
- Description：MOSFET N-CH 100V 3A SOT-223
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：150mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
- Vgs (Max)：20V
- Input Capacitance (Ciss) (Max) @ Vds：975 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223
- Package / Case：TO-261-4, TO-261AA
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Overview
The CZDM1003N is a surface-mount silicon N-channel enhancement-mode MOSFET designed for motor control and relay driver applications. It features a drain-source voltage of 100 V, continuous drain current of 3.0 A, and maximum pulsed drain current of 12 A. The device offers low on-resistance (70 to 150 mΩ at 10 V gate drive) and low gate charge (15 nC). Operating junction temperature ranges from -55°C to +150°C with power dissipation of 2.0 W in an SOT-223 package.
Feature Summary
- High current capability with low on-resistance
- Low gate charge for efficient switching
- Designed for robust motor control and relay driver environments
Applications
- Motor control circuits
- Relay driver stages
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix required for your manufacturing process. The standard TR suffix indicates tape and reel packaging. Confirm RoHS compliance status and lead-free plating requirements before finalizing procurement specifications to ensure compatibility with assembly standards.
Selection Notes
Select this component when designing circuits requiring a 100 V rated N-channel MOSFET with moderate current handling up to 3.0 A. Evaluate thermal management needs carefully due to the 2.0 W power dissipation limit in the SOT-223 package. Ensure gate drive voltages align with the specified threshold and on-resistance characteristics for optimal performance.
Part Context
This part belongs to Central Semiconductor's discrete MOSFET portfolio, specifically tailored for general-purpose switching applications. It utilizes silicon technology optimized for high-current density within compact surface-mount footprints. The SOT-223 case provides a balance between thermal performance and board space efficiency for industrial electronics.
Replacement Considerations
The product is discontinued and classified as End of Life. No official replacement part numbers are provided by the manufacturer. Designers must identify third-party equivalents or redesign using available stock inventory if immediate production continuity is required.
