DCP69-25-13

Single Bipolar Transistors Overview

The DCP69-25-13 is a PNP medium power transistor manufactured by Diodes Incorporated, housed in an SOT223 surface-mount package. It features a collector-emitter voltage (VCEO) of -20 V and a collector-base voltage (VCBO) of -25 V. The device supports a maximum continuous collector current (IC) of -1 A and a peak pulse current (ICM) of -2 A. Electrical characteristics include a DC current gain (hFE) range of 160 to 375 at IC = -500 mA and VCE = -1 V, with a transition frequency (fT) between 40 MHz and 200 MHz. Power dissipation reaches 1 W on standard FR-4 PCBs and up to 2 W with optimized copper pad layouts.

Single Bipolar Transistors Feature Summary

• Epitaxial planar die construction for reliable switching and amplification
• Totally lead-free and fully RoHS compliant with halogen and antimony-free green compound
• High current capability with exposed heatsink design for improved thermal conductivity
• Complementary NPN type available as DCP68

Single Bipolar Transistors Applications

• Medium power switching applications
• Amplification circuits
• Linear voltage regulators
• High-side switches
• Battery-driven devices

Single Bipolar Transistors Procurement Notes

Verify the obsolete status of the DCP69-25-13 variant before procurement planning. Confirm that the specific hFE binning requirements align with the 160-375 range documented for this suffix. Ensure compliance with the specified RoHS and Green Device standards if environmental regulations apply to the final assembly. Check for availability of the active DCP69-13 alternative if supply continuity is required.

Single Bipolar Transistors Selection Notes

Select the DCP69-25-13 when a higher collector-base breakdown voltage (-25 V) is necessary compared to the standard -20 V rating. This variant provides a guaranteed minimum hFE of 160 at 500 mA, suitable for high-gain amplification stages. Consider the complementary DCP68 for push-pull configurations. Evaluate thermal management strategies based on the 1 W or 2 W dissipation limits depending on the PCB copper layout constraints.

Single Bipolar Transistors Part Context

This component belongs to the DCP69 series of PNP medium power transistors designed for general-purpose use in compact electronic designs. Manufactured by Diodes Incorporated, it utilizes a SOT223 case material classified as UL 94V-0 flammability rated molded plastic. The series is intended for automated assembly processes and offers robust mechanical data including matte tin terminals solderable per MIL-STD-208.

Single Bipolar Transistors Replacement Considerations

The DCP69-16-13 and DCP69-13 are listed within the same datasheet family but represent different hFE bins rather than direct functional substitutes with identical electrical ratings. No other public substitute part numbers are confirmed in the provided documentation.