DD1200S33KL2CB5NOSA1

Diode Arrays Overview

The DD1200S33KL2C_B5 is a high-power diode module rated for a repetitive peak reverse voltage of 3300 V and a continuous DC forward current of 1200 A. It features a maximum power dissipation of 1800 kW at a junction temperature of 125°C, with a minimum turn-on time of 10.0 µs. The device utilizes an AlSiC baseplate and AlN internal insulation, providing an isolation test voltage of 10.2 kV RMS. Key electrical characteristics include a forward voltage of 2.60 V at 1200 A (Tvj=25°C) and a peak reverse recovery current of 1400 A at 125°C under specified switching conditions.

Diode Arrays Feature Summary

• Utilizes an Aluminum Silicon Carbide (AlSiC) baseplate to enhance thermal conductivity and mechanical stability.
• Incorporates Aluminum Nitride (AlN) internal basic insulation compliant with IEC 61140 Class 1 standards.
• Features low stray inductance of 25 nH to minimize switching transients and electromagnetic interference.

Diode Arrays Applications

• High-voltage industrial motor drives
• Medium voltage traction systems
• HVDC transmission equipment

Diode Arrays Procurement Notes

Verify the specific ordering suffix KL2C_B5 against official Infineon documentation to confirm manufacturing status and revision level. Ensure that the application environment strictly adheres to the specified mounting torque ranges for M6 and M4/M8 terminals to maintain reliable electrical contact and prevent mechanical failure during operation.

Diode Arrays Selection Notes

Select this component when applications require extreme voltage blocking capabilities exceeding standard industrial ratings. The AlSiC substrate provides superior thermal expansion matching compared to traditional copper substrates, making it suitable for high-power density designs where thermal cycling reliability is critical. Evaluate the 10.2 kV isolation rating against system creepage and clearance requirements.

Diode Arrays Part Context

This module belongs to the high-voltage diode segment within Infineon's portfolio, designed specifically for demanding power conversion environments. It serves as a critical component in rectifier bridges and freewheeling circuits where robustness against high surge currents and rapid switching transitions is mandatory for system integrity.

Diode Arrays Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement matches the 3300 V rating, 1200 A current capacity, and physical footprint constraints without altering the isolation or thermal management specifications.