SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DD1600S33HE4BPSA1 is an IHM-B module featuring Emitter Controlled 4 diodes. It has a repetitive peak reverse voltage of 3300 V and a continuous DC forward current of 1600 A. The maximum RMS module DC-terminal current is 1200 A at TC = 80 °C. The package includes an AlSiC base plate with an isolated design and a CTI greater than 600. Insulation test voltage is 6.0 kV RMS, and partial discharge extinction voltage is 2.6 kV RMS.
Verify the specific suffix BPSA1 against official Infineon documentation to confirm exact ordering details and availability status. Ensure compliance with IEC 60747, 60749, and 60068 standards for industrial application validation before procurement.
Select this component for high-power applications requiring robust thermal management and high voltage isolation. The AlSiC base plate supports demanding thermal cycling conditions. Verify mounting torque specifications (M6: 4.25-5.75 Nm) during integration to ensure mechanical integrity.
This part belongs to the Infineon IHM-B module family, designed for high-performance power electronics. It utilizes emitter-controlled technology to optimize switching characteristics. The module is qualified for industrial environments according to relevant international testing standards.
Consult official Infineon cross-reference lists for verified substitutes. Do not assume compatibility based on similar ratings alone; verify pinout, thermal resistance, and insulation coordination.
The minimum turn-on time is 10 µs, and the operating junction temperature range is -40 °C to 150 °C.
Yes, the module features an isolated base plate with a comparative tracking index (CTI) greater than 600.