DDB2504-000

RF Diode Overview

The DDB2504-000 is a P-type silicon Schottky barrier detector diode designed for Ku band applications up to 40 GHz. It features beam-lead construction with an outline drawing of 491-006. Key electrical specifications include a reverse voltage (VR) of 2 V maximum, forward current (IF) of 100 mA maximum, and RF input power dissipation (PD) of 75 mW at 25 °C. Tangential signal sensitivity (TSS) is -48 dBm at a 50 μA bias. Video resistance (RV) ranges from 500 Ω to 700 Ω typical, with junction capacitance (CJ) at 0 V being 0.10 pF maximum. Forward voltage (VF) at 1 mA is 2 mV maximum, and bias voltage (VB) at 10 μA is 16.00 V typical.

RF Diode Feature Summary

• Utilizes P-type silicon material to achieve superior low 1/f noise characteristics suitable for high-sensitivity detection.
• Features planar passivated beam-lead construction optimized for close impedance control and low series resistance.
• Designed for mounting on special customer substrates, supporting both unmounted chips and mounted configurations in MIC or stripline circuits.

RF Diode Applications

• Microwave integrated circuit (MIC) detectors
• High-sensitivity video detection in Ku band
• Doppler mixers requiring low noise performance

RF Diode Procurement Notes

Verify the specific ordering suffix matches the required package type, as the datasheet distinguishes between bare die waffle packs and beam-lead gel-pack carriers. Confirm that the P-type variant aligns with low-noise design requirements rather than standard N-type availability. Ensure handling procedures adhere to industry-standard ESD precautions due to the device's sensitivity.

RF Diode Selection Notes

Select this component when Ku band operation with a tangential signal sensitivity of -48 dBm is required. The P-type construction is necessary for applications prioritizing low 1/f noise over the lower conversion loss offered by N-type alternatives. Designers must account for the specified video resistance range and junction capacitance to ensure proper impedance matching in the target circuit topology.

RF Diode Part Context

This part belongs to the Skyworks DDB2503/04 series of silicon Schottky barrier diodes. It shares the same 491-006 outline drawing and general beam-lead architecture as the DDB2503-000, which is optimized for the X band. Both devices utilize similar manufacturing processes involving epitaxial silicon substrates and barrier metal deposition to form the junction.

RF Diode Replacement Considerations

The DDB2503-000 serves as a functional alternative within the same series but is optimized for the X band rather than Ku band. Substitution requires verifying that the X band TSS and frequency response meet the system requirements. Other universal chips like CDB7620-000 offer different barrier types and package outlines, necessitating re-evaluation of mounting and biasing circuits.