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The DDTA113TE-7-F is a PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT523 surface-mount package. It features a built-in single biasing resistor (R1) with a nominal value of 1 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current of -100 mA. Power dissipation is rated at 150 mW, with an operating temperature range spanning from -55°C to +150°C. Electrical characteristics include a minimum DC current gain (hFE) of 100 and a typical transition frequency (fT) of 250 MHz.
Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the component status remains active and matches the required compliance standards. Ensure packaging quantities align with production requirements. Cross-reference datasheet revisions to validate electrical parameters. Check for any automotive-specific qualification requirements if applicable to the target application.
Select this component when a compact PNP solution with integrated base resistance is required. The 1 kΩ internal resistor value determines the input drive characteristics. Verify that the -50 V voltage rating meets the system's maximum operating conditions. Consider the SOT523 package dimensions for PCB layout constraints. Evaluate thermal dissipation capabilities based on the expected load current and ambient temperature.
This part belongs to the DDTA series of PNP pre-biased transistors offered by Diodes Incorporated. The series provides various resistor values to suit different drive requirements while maintaining a consistent small-form-factor footprint. The DDTA113 variant specifically integrates a 1 kΩ resistor, distinguishing it from other members of the family with higher resistance values.
Direct replacements within the same series include DDTA123TE-7-F and DDTA143TE-7-F, which share identical packages and ratings but feature different nominal resistor values.