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The DDTA113TE-7 is a PNP pre-biased small signal surface mount transistor manufactured by Diodes Incorporated. It utilizes epitaxial planar die construction and features a built-in biasing resistor (R1 only) with a nominal value of 1 kΩ. The device is housed in an SOT523 package, measuring approximately 1.6 mm in length and 0.75 mm in height. Key electrical ratings include a collector-emitter voltage (VCEO) of -50 V, a continuous collector current of -100 mA, and a power dissipation of 150 mW at +25°C. The DC current gain (hFE) ranges from 100 to 600, with a typical transition frequency of 250 MHz.
Verify the specific ordering suffix against official documentation, as variations such as -7-F may indicate differences in packaging or reel specifications rather than functional changes. Confirm compliance requirements including RoHS 3 and REACH status directly with the manufacturer or authorized distributors prior to procurement to ensure alignment with project regulations.
Select this component when a compact PNP solution with integrated base resistance is required. Ensure the 1 kΩ internal resistor value matches the drive source impedance and desired saturation levels. Verify that the SOT523 package dimensions fit the available PCB footprint and that the thermal characteristics support the expected power dissipation in the target application environment.
This part belongs to the DDTA series of PNP pre-biased transistors from Diodes Incorporated. It is functionally complementary to the DDTC series of NPN types. The device is designed for space-constrained surface mount applications where reducing external component count and board area is critical for system miniaturization.
Direct substitutes within the same family include DDTA113TE-7-F. Cross-manufacturer equivalents should be verified for pinout compatibility, voltage ratings, and internal resistor values before implementation.