SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DDTA113TUA-7-F is a PNP pre-biased transistor from Diodes Incorporated, housed in an SOT-323 package. It features a built-in base resistor (R1) with a nominal value of 1 kΩ and a tolerance of ±30%. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA. Power dissipation is rated at 200 mW, with a thermal resistance (RθJA) of 625 °C/W. The DC current transfer ratio (hFE) ranges from 100 to 600 at IC = -1 mA and VCE = -5 V. The gain-bandwidth product (fT) is typically 250 MHz. Operating and storage temperatures span from -55°C to +150°C.
Verify the specific ordering suffix '-7-F' corresponds to the standard reel size of 3,000 units per 7-inch reel. Confirm compliance requirements such as RoHS 3 and REACH status directly with the manufacturer or authorized distributors before finalizing procurement. Ensure the application environment remains within the specified operating temperature range of -55°C to +150°C.
Select this component when a PNP pre-biased transistor with a 1 kΩ base resistor is required in an SOT-323 package. Consider the complementary NPN type (DDTC series) if an NPN configuration is needed. Verify that the 200 mW power dissipation rating and -100 mA current limit meet the specific load requirements of the target application.
This part belongs to the DDTA (R1-ONLY SERIES) UA family from Diodes Incorporated. It is specifically designed as a PNP pre-biased transistor. Other members of this series include variants with different resistor values, such as DDTA114TUA (10 kΩ) and DDTA115TUA (100 kΩ), all sharing the same SOT-323 package and electrical characteristics except for the internal resistor value.
Direct substitutes within the same series include DDTA113TU (without the -7-F suffix, indicating potential packaging differences). For complementary NPN functionality, consider the DDTC113TUA-7-F. Always verify pinout compatibility and absolute maximum ratings before substituting.