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The DDTA114GCA-7-F is a PNP pre-biased small signal transistor from Diodes Incorporated, housed in an SOT-23 surface-mount package. It features an epitaxial planar die construction and integrates a single internal biasing resistor (R2) with a nominal value of 10 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA. Power dissipation is rated at 200 mW, with a gain-bandwidth product (fT) of 250 MHz. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix '-7-F' corresponds to the tape and reel packaging configuration containing 3000 units per reel. Confirm that the component meets RoHS compliance requirements and is free of lead, halogens, and antimony. Ensure the date code aligns with green molding compound specifications if environmental restrictions apply to the assembly process.
Select this component when a PNP digital transistor with a 10 kΩ internal emitter resistor is required. Compare against the DDTC114GCA series for complementary NPN configurations. Evaluate thermal resistance characteristics relative to the FR4 PCB pad layout to ensure junction temperature limits are not exceeded during operation.
This part belongs to the DDTA R2-only series within Diodes Incorporated's portfolio of pre-biased transistors. It serves as the PNP counterpart to the DDTC family. The 'CA' designation indicates the specific internal resistor value and package type combination, distinguishing it from other variants like the DDTA124GCA which utilizes a 22 kΩ resistor.
Direct substitutes include the DDTC114GCA-7-F for NPN polarity requirements. Other compatible parts within the same series include DDTA124GCA-7-F, DDTA144GCA-7-F, and DDTA115GCA-7-F, provided the different internal resistor values are acceptable for the application.