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The DDTA114GE-7-F is a PNP pre-biased small signal surface mount transistor manufactured by Diodes Incorporated. It features an epitaxial planar die construction and includes a built-in shunt biasing resistor (R2) with a nominal value of 10 kΩ. The device operates within a collector-emitter voltage range of -50 V and supports a continuous collector current of 100 mA. Power dissipation is rated at 150 mW, with a thermal resistance of 833 °C/W. The component is housed in an SOT-523 package and complies with AEC-Q101 standards for high reliability.
Verify the specific ordering suffix '-7-F' against official documentation to confirm reel size and tape width specifications. Ensure compliance requirements match project needs, as the part is designated as halogen and antimony free. Confirm that the SOT-523 package dimensions align with the target PCB footprint layout before finalizing procurement orders.
Select this component when a PNP digital transistor with a 10 kΩ internal shunt resistor is required. The SOT-523 package offers a compact form factor suitable for space-constrained designs. Consider the 150 mW power dissipation limit and -50 V voltage rating to ensure adequate margins for the intended operating conditions.
This part belongs to the DDTA (R2-Only Series E) family from Diodes Incorporated. It is specifically designed as a PNP pre-biased transistor. Complementary NPN types are available within the same series, providing options for complete push-pull or differential circuit implementations without needing external discrete resistors.
Complementary NPN versions such as DDTC114GE-7-F are available within the same product family. Verify pinout compatibility and electrical parameter symmetry if substituting between PNP and NPN variants in existing circuit designs.